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  this is information on a product in full production. june 2012 doc id 023010 rev 3 1/14 14 STL7DN6LF3 dual n-channel 60 v, 35 m typ., 6.5 a stripfet? iii power mosfet in powerflat? 5x6 double island package datasheet ? production data features logic level v gs(th) 175 c junction temperature 100% avalanche rated applications switching applications automotive description this device is a dual n-channel enhancement mode power mosfet produced using stmicroelectronics? stripfet? iii technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. figure 1. internal schematic diagram order code v dss r ds(on) max i d STL7DN6LF3 60 v < 43 m 6.5 a (1) 1. the value is rated according to r thj-pcb powerflat? 5x6 double island 1 2 3 4 top view table 1. device summary order code marking package packaging STL7DN6LF3 7dn6lf3 powerflat? 5x6 double island tape and reel www.st.com
contents STL7DN6LF3 2/14 doc id 023010 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL7DN6LF3 electrical ratings doc id 023010 rev 3 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d (1),(2) 1. specified by design. not subject to production test. 2. current is limited by bonding, with an r thjc = 2.9 c/w the chip is able to carry 22 a at 25 c. drain current (continuous) at t c = 25 c 20 a i d drain current (continuous) at t c = 100 c 16 a i d (4) drain current (continuous) at t pcb = 25 c 6.5 a i d (4) drain current (continuous) at t pcb =100 c 4.6 a i dm (3),(4) 3. pulse width limited by safe operating area 4. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec drain current (pulsed) 26 a p tot total dissipation at t c = 25c 52 w p tot (4) total dissipation at t pcb = 25c 4.3 w i av not-repetitive avalanche current 6.5 a e as (5) 5. starting t j = 25 c, i d = 8 a, v dd = 25 v, per channel, 100% tested. single pulse avalanche energy 190 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2.9 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 35 c/w
electrical characteristics STL7DN6LF3 4/14 doc id 023010 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v 1 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 3 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3 a v gs = 5 v, i d = 3 a 35 48 43 60 m m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 432 93 10.5 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =30 v, i d = 6.5 a v gs =10 v figure 13 - 8.8 2.1 1.9 - nc nc nc r g intrinsic gate resistance f=1 mhz open drain - 6.3 - table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =tbd, i d = 3 a, r g =4.7 , v gs =10 v figure 12 - tbd tbd tbd tbd - ns ns ns ns
STL7DN6LF3 electrical characteristics doc id 023010 rev 3 5/14 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 6.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 26 a v sd (2) 2. pulsed: pulse duration= 300 s, duty cycle 1.5% forward on voltage i sd = 6.5 a, v gs =0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.5 a, di/dt = 100 a/s, v dd =6.5 v, tj=150 c - 24 23.3 1.94 ns nc a
electrical characteristics STL7DN6LF3 6/14 doc id 023010 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v ds vs temperature figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 1 s 100m s 10m s tj=175c tc=25c s ingle p u l s e am1 3 02 3 v1 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 10 0 10 1 10 - 3 zth_am1 3 007v1 i d 15 10 5 0 0 2 v d s (v) 4 (a) 1 3 20 25 4v 5v v g s =10v am1 3 024v1 i d 15 10 5 0 0 2 v g s (v) 4 (a) 1 3 20 25 v d s =5v am1 3 025v1 v d s -75 t j (c) (norm) -25 75 25 125 0.90 0.94 0.9 8 1.02 1.06 i d =1ma 1.10 am1 3 010v1 r d s (on) 3 5.0 3 4. 8 3 4.6 3 4.4 3 i d (a) (m ) 2 4 3 5.2 3 5.4 5 v g s =10v am1 3 026v1
STL7DN6LF3 electrical characteristics doc id 023010 rev 3 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd = 3 0v i d =6.5a 10 am1 3 027v1 c 100 10 0 10 v d s (v) (pf) 20 ci ss co ss cr ss 3 0 40 50 am1 3 02 8 v1 v g s (th) 1.0 0. 8 0.6 0.4 -75 t j (c) (norm) -25 1.2 75 25 125 i d =250 a am1 3 014v1 r d s (on) 1.2 0. 8 0.4 0 -75 t j (c) (norm) -25 75 25 125 1.6 2.0 i d =4a v g s =10v am1 3 015v1
test circuits STL7DN6LF3 8/14 doc id 023010 rev 3 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform figure 17. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL7DN6LF3 package mechanical data doc id 023010 rev 3 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL7DN6LF3 10/14 doc id 023010 rev 3 table 8. powerflat? 5x6 double island (ribbon) type b mechanical data ref. dimensions (mm) min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 5.95 6.15 6.35 d2 1.68 1.88 e2 3.50 3.70 d3 1.68 1.88 e3 3.50 3.70 e4 0.55 0.75 e1.27 l 0.60 0.80 k 1.275 1.575
STL7DN6LF3 package mechanical data doc id 023010 rev 3 11/14 figure 18. powerflat? 5x6 double island (ribbon) type b drawing bottom view s ide view top view 8 256945_rev.d_ri bb on
package mechanical data STL7DN6LF3 12/14 doc id 023010 rev 3 figure 19. powerflat? 5x6 double island (ribbon) recommended footprint (dimensions are in mm) footprint_ri bb on
STL7DN6LF3 revision history doc id 023010 rev 3 13/14 5 revision history table 9. document revision history date revision changes 28-mar-2012 1 first release. 19-jun-2012 2 section 2.1: electrical characteristics (curves) has been added. updated section 4: package mechanical data and tile on the coverpage. 26-jun-2012 3 document status promoted from preliminary to production data.
STL7DN6LF3 14/14 doc id 023010 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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